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We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
Polarization stable, wafer-fused 1310 nm VCSELs employing sub-wavelength shallow gratings on their top DBR and emitting 1.5 mW single mode output power in the 20degC-75degC temperature range are demonstrated.
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