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There is a clear trend toward increment of packing density in the integrated circuit technologies. The extensibility of application of poly-Si to VLSI is limited by its relatively high sheet resistance. Refractory metal silicides have been proposed as an alternative material to poly-Si. In particular , MoSi2 and WSi have been studied for the applications io the gate material and the interconnecting...
Plasma-activated CVD can produce aluminum films of electronic grade. Plasma-CVD films exhibit small inclusions of impurities and resistivities of the same order as those of a sputtered film. Crystal morphology is different from conventional films and is promising for fine-line patterning. Stepcoverage over steep steps is superior to sputtering. This technique produces little damage to the thin-SiO2...
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