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Cost-effective and high performance Cu interconnects with keff=2.75 were developed in single-step continuous SiOCH stack incorporating a low-k barrier cap of silica-amorphous-carbon-composite (SACC)-SiOCH film (k=3.1,E=20 GPa) with anti-oxidation surface treatment of Cu. The SACC-cap was effective to improve the adhesion strength besides the Cu diffusion barrier property. The continuous SiOCH stack...
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