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We demonstrate NMOS performance enhancements of up to ~18% for applications in a 45 nm SOI technology. The performance boost was achieved using high tensile-stressed UV film in conjunction with stress memorization techniques (SMT). For the first time we demonstrate that using a UV-cured tensile film allows a 6% performance boost on the SOI NMOS, achieving a drive current of ~1170 muA/mum (1250, non-self-heated)...
A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved product yields and also mitigates "walking- wounded" device characteristics that oftentimes plague the operation and speed grades of advanced microprocessors...
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