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The origin of the large Vt shift observed in planar FDSOI is the creation of negative charge states in the BOX by F implant. F implant is a suitable approach for planar FDSOI SoC integration with single WF metal gate, but NOT for MuGFETs. F implant degrades electron mobility and the degradation is a function of F dose. The hole mobility is unaffected by F implant.
Multiple-gate-MOSFETs (MuGFET) have better short-channel effects (SCE) control than planar MOSFET and MuGFETs are good candidates to replace planar bulk MOSFET for low power applications. A key feature in the MuGFETs is the recess and undercut of the fins in the buried oxide. Undercut improves gate control of the channel at fin and BOx interface, but also undermines the fin stability, and increases...
The dependence of threshold voltage on device dimensions and number of gates is analyzed. A new definition of threshold voltage, based on quantum-mechanical considerations, is proposed.
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