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We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant...
We study intrinsic parameter fluctuations caused by atomicity of matter in a 10 nm gate length MOSFET through the use of a 3D parallel drift-diffusion simulator. To carry out the study we have developed a meshing scheme which allows to take into account the actual positions of the dopants in the crystal lattice. We illustrate the impact of random positions of dopants on the threshold voltage and the...
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