Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
In this paper, a numerical tool based on lattice Boltzmann method is developed to simulate the transient thermal response of hot-spots in a multilayered film. The developed tool can successfully simulate complex multiscale systems involving multiple energy carriers with different length and time scales.
A systematic study of parallel and perpendicular exchange bias as well as magnetic anisotropy in [FePt/FeMn]10 multilayers is performed. The dependence of exchange bias (HE) and the unidirectional anisotropy constant (JK) on the thickness of FePt layer is investigated. The dependence of blocking temperature (TB) and exchange bias on the FeMn thickness is also investigated.
In this study, the formation of L12-Mn3Rh and L12-Mn3Ru phases were examined, in accordance with the recipe of L12-phase formation for Mn-Ir. The exchange biasing properties of the bilayers with these L12 phases were investigated.
We study the applicability of perpendicular exchange-biased Co/Pt multilayers as a reference layer in magnetic spin valves. We specifically focus on spin valves with IrMn-biased and perpendicular synthetic antiferromagnetic structures. The spin valves were deposited by dc magnetron sputtering through a metal shadow mask onto 500 nm thick silicon dioxide films. The shadow mask defined Hall bars with...
This study investigates the exchange bias for Co2Cr0.6Fe0.4Al (CCFA) thin films epitaxially grown on MgO buffer layers. The CCFA/Ru/Co90Fe10 (CoFe) trilayers exchange biased with an IrMn layer through the CoFe/IrMn interface is investigated. Antiferromagnetic coupling was well established for all the CCFA/Ru/CoFe trilayers with tCCTA of between 2.5 and 4.0 nm and thus confirming that the CCFA/Ru/CoFe...
In this work we represent a comprehensive study of indirect exchange coupling between ferromagnetic (F) and antiferromagnetic (AF) layers carried out on NiFe(5 nm)/Cu(d)/IrMn(10 nm) thin film structure. NiFe/Cu/IrMn films were fabricated by magnetron sputtering with a seed and a capping layers of Ta(5nm). The thickness d of the Cu spacer was varied from 0.2 nm to 2 nm. The Cu spacer thickness was...
In this paper, a CoCrPt-SiO2 based recording media with reduced Ru interlayer thickness was investigated. The Ta seedlayer, Ru interlayer and magnetic layer were deposited by DC magnetron sputtering on cover glass substrates. Magnetic properties were tested using a vibrating sample magnetometer; interface morphology was examined by X-ray reflectivity and atomic force microscopy; and film orientation...
This research investigates the design and fabrication of digital magnetic structures consisting of multilayers that exhibit uniaxial anisotropy and can adopt one or more of several distinguishable magnetic states. Such digital magnetic structures can be used as a basis for nanoscale memory devices, logic devices, etc. The direction of the magnetisation of each layer corresponds to either a "1"...
We performed temperature dependent X-ray magnetic circular dichroism (XMCD) measurements at transition metal L2,3-edges. Our results indicate that the interface is a key factor in influencing the superlattices of magnetic moments and observed that the magnetic behavior is different for Fe3O4 and Mn3O4. The Curie temperature (Tc) of Mn3O4 thin film is enhanced at 15K and similar behavior was observed...
In this work, a combinatorial approach to the synthesis of magnetic multilayers is explored. Combinatorial libraries of Co/Pd multilayer thin films were prepared using off-axis magnetron sputtering to enable thickness gradients across the wafer-magnetic properties of the multilayers are controlled by the thicknesses of Co and Pd layers in the repeated bi-layer stack. Polar magneto-optical Kerr effect...
In this paper, the characteristics of the osmium (Os) in textured CoFe/IrMn magnetic film multilayer structure system is investigated and the characteristics of buffer layer and diffusion barrier is also reported. To examine the magnetic behavior, magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer (VSM) are used and XRD is used to examine the crystal structure. As a result, a textured...
Magnetic properties of magnetic multilayers, such as Co/Cu and Tb/Co, deeply depend on sputtering conditions (S.S.P. Parkin et al., 1991),(S. Schumeusser et al., 1997). However, it is not clear that the relationship between plasma parameter of sputtering discharge, and interface structure and magnetic properties of the multilayers. In particular, the magnetoresistance (MR) ratio for Co/Cu multilayers...
In this work, we report a study of the temperature dependence of magnetotransport properties for a series of [AF-LCMO (7.6nm)/F-LCMO (tF)]N superlattices. Superlattices of F-LCMO and AF-LCMO layers were grown on (001)-oriented SrTiO3 substrates via a high-pressure dc sputtering process. The modulation period have been experimentally derived from X-ray diffraction measurements, confirming that for...
The thickness effect on the magnetic properties and giant magneto-impedance (GMI) effect of the multilayer film are investigated. The proportion of the perpendicular magnetization component in ferromagnetic layers and the interfacial effect in multilayers are the reasons of the phenomenon.
This paper investigates the relationship between the tunneling magnetoresistance (TMR) ratio and the structure of MgO-based MTJs with crystallized CoFeB layers by annealing having CoFe/Ru/CoFeB synthetic ferrimagnet (SF) pin layers with varying Ru spacer thicknesses (tRu). When annealing temperature Ta is lower than 325degC, the Ta dependences of the TMR ratio are similar among all the MTJs. However,...
In this paper, we have fabricated and studied the bias dependence of magnetic tunnel junctions based on a CoFeB / MgO / CoFeB tri-layer structure. These structures exhibit TMR ratios as high as 236% at room temperature. Furthermore, we have observes a weakened dependence of TMR on bias voltage in these structures, with the MR ratio decaying to one half of the zero-bias value at an applied voltage...
This paper aims to investigate the magnetic and electrical properties of magnetic tunnel junctions with MgO barriers. The magnetoresistance of the junction is measured at 0.4 V. Results show a magnetoresistance of almost the same values at varying radical oxidation time and Mg thickness. It is also confirmed in this study that the MgO formed by radical oxidation of Mg shows high magnetoresistance...
This article discusses the TMR, tunneling resistance, and I-V characteristic in FeCo/MgO/FeCo MTJs with various FeCo/MgO interface state by using wedged-film deposition technique.
Trilayer films with two 25 nm thick SmCo5 films and intermediate Fe layer of thickness 6 nm and 16 nm have been prepared and compared with a single SmCo5 film of 50 nm thickness. Composition of the SmCo layers and individual layer thicknesses were determined by energy dispersive X-ray analysis (EDX) at various acceleration voltages. The magnetic hysteresis measured along the SmCo5 [001] orientation...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.