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This paper investigates the switching speed in samples having different surfaces (hereafter quoted as "small" or "large" samples), and compares the temperature dependences thereof. The "large" samples are pseudo-spin valves Co75Fe25 (2.5 nm)/Cu(6 nm)/Co75Fe25(40 nm). The top (thin) layer is patterned into an ellipse of size 150times85 nm, while the bottom layer is unpatterned...
The authors report on current-induced domain wall (DW) movement in synthetic spin valves. The high exchanged field in synthetic antiferromagnets (SAF) keeps the the magnetization of the pinned layer unchanged during the measurement. Thus, the GMR measurement allows to an accurate determination of the DW position and displacement.
Half metallic Fe3O4 with a fully spin-polarized band structure at the Fermi level is one of the most promising materials for magnetic random access memory (MRAM), which stores data in pseudo spin valve (PSV) or magnetic tunneling junction elements. Ordered arrays of such nanostructures provide the basic magnetic architecture required to produce MRAM. Fe3O4 (40 nm) / Cu (tCu) / Ni80Fe20 (30 nm) PSV...
Graphene is a name given to an atomic layer of carbon atoms densely packed into a benzene-ring structure with a nearest-neighbour distance of ~1.4Aring. This theoretical material is widely used in the description of the crystal structure and properties of graphite, large fullerenes and carbon nanotubes. As a first approximation, graphite is made of graphene layers relatively loosely stacked on top...
The very small and dense SDT memory cells arrays can be achieved with SDT memory cells in which the information is stored in the direction of the IrMn low blocking temperature. To demonstrate the durability and stability of the written IrMn antiferromagnetic pinning, a variety of test were conducted. For simplicity in fabrication, the test were conducted with just spin valve cells rather SDT cells...
Exchange bias (EB) refers to the shift of the hysteresis loop, typically observed in exchange interacting ferromagnetic (FM)-antiferromagnetic (AFM) materials. During the last decades, EB properties have been extensively investigated, mainly in thin films, due to their technological applications in magnetic random access memories and magnetoresistive read heads based on spin valves or tunnel junctions...
In this paper we study the coupling mechanism between the conduction electrons and the allowed spin wave modes of a micron size system. To achieve this goal we investigate the variation of the giant magneto resistance (GMR) effect in a single spin valve sensor as a function of the spin wave mode excited in the system. We couple ferromagnetic resonance technique on a single sensor with transport measurements...
In this study, the effects of post annealing temperature ranging from 250 degC to 350 degC on the giant magnetoresistance (GMR) ratio and conductance change (DeltaG) have been investigated. The structure of the GMR spin-valve consists of Cu (10 A) / IrMn (80 A) / CoFe (15 A) / NOL / CoFe (20 A) / Cu (28 A) / CoFe (tf) / NOL / Cu (10 A) / Al2O3 where tf is varied from 10 A to 200 A and NOL is a nano-oxide...
Tunneling magnetoresistive (TMR) head are promising device for high storage density of 100 Gbit/in magnetic recording head. Structure of TMR recording head is different from typical giant magnetoresistive (GMR) spin-valve read head. It is essential to understand the electrostatic discharge (ESD) effect on TMR device behavior and its impacts on device characterization. In this paper, we reported several...
In this article, the authors proposed an alternative method to improve the magnetoresistance (MR) by inserting a thin ferromagnetic (FM) layer in the nonmagnetic (NM) spacer of a basic spin valve (SV) trilayer structure (FM-NM-FM), thus creating a pentalayer structure. It is found that MR value can be doubled by inserting a FM layer with high intrinsic spin polarization, such as halfmetallic CrO2.
There has been intense research effort to increase the magnetoresistance (MR) of current-perpendicular-to-plane (CPP) spin valve, so as to maintain the high rates of areal density growth of magnetic media platters of the hard disk towards 1 Tbit/in2 and beyond. It has been proposed recently that MR can be increased with the insertion of ferromagnetic or half-metalic layers into the basic CPP spin-valve...
In this paper we report CIMS in CPP-GMR spin valve elements with longitudinal permanent magnet bias and present sense current density limit without CIMS.
In this study, the formation of L12-Mn3Rh and L12-Mn3Ru phases were examined, in accordance with the recipe of L12-phase formation for Mn-Ir. The exchange biasing properties of the bilayers with these L12 phases were investigated.
We study the applicability of perpendicular exchange-biased Co/Pt multilayers as a reference layer in magnetic spin valves. We specifically focus on spin valves with IrMn-biased and perpendicular synthetic antiferromagnetic structures. The spin valves were deposited by dc magnetron sputtering through a metal shadow mask onto 500 nm thick silicon dioxide films. The shadow mask defined Hall bars with...
In this paper, complex impedance spectroscopy was used on an equivalent circuit model to analyze the AC behavior of a pseudo spin valve (PSV) and found that fr depends on the nano-oxide layers' (NOL) thickness .
The authors have developed EB assisted chemical-vapor-deposition (CVD) hard mask method. We have reported that by using this method, CPP-GMR spin valves with the minimum pillar size of 34nm could be achieved and a reasonable MR properties were obtained. In this study, CIMS observation was demonstrated in CPP-GMR spin valves with nominal size of 30-80 nm fabricated using EB assisted CVD hard masks...
In this study, spin-transfer induced magnetization dynamics in exchange-biased spin-valves, for both polarities of current and field are studied. The structure of the samples included a synthetic pinned layer and a soft free layer, patterned into square pillars with a lateral size of the order of 100 nm. The resistance of the pillars was of the order of 5Omega, and the measured giant magnetoresistance...
This paper investigated the effects of flux concentrators (FCs) on magnetic 1/f noise in magnetoresistive sensing devices. This is done by comparing results for the cases of bare (without FCs) sensors and those with FCs. It is shown that FCs can be a source of broad-band low frequency noise in AC MEMS flux concentrator device when the signal modulation amplitudes are sufficiently high.
Magnetotransport and current-induced magnetic domain wall displacement is studied in the CoFe layer of a submicron pseudo-spin-valve stripe (Ta/CoFe/Cu/NiFe/Ta) on the oxidized Si wafer. The magnetoresistance (MR) loop and magnetization configurations of the submicron stripe were obtained.
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