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In this study, we investigated that both magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs with the NiFeSiB free layer. The junctions were fabricated by a photolithographic patterning procedure and ion beam etching. A magnetic field of 100 Oe was applied during deposition to induce the uniaxial magnetic anisotropy in ferromagnetic layer.The NiFeSiB layers were used to substitute...
In this report, we will demonstrate that by simply using a bilayer capping layer of Ru/Ta instead of usually used Ta, the switching field, as well as distribution of switching fields, of magnetic tunnel junctions (MTJ) can be considerably reduced. Two samples with the same MTJ stack of Ta/PtMn/SAF-pinned/AlOx/CoFeB(2 nm) (bottom to top) but capped by different metal layers of Ta and Ru/Ta, correspondingly,...
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