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The current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various free layer materials including synthetic structure was studied in this paper. The MTJ films were deposited on SiO2/Si substrates using RF magnetron sputtering. The tunnel magnetoresistance (TMR) ratios and current-voltage (I-V) characteristics of the the MTJs were measured at room temperature...
This paper investigates the switching speed in samples having different surfaces (hereafter quoted as "small" or "large" samples), and compares the temperature dependences thereof. The "large" samples are pseudo-spin valves Co75Fe25 (2.5 nm)/Cu(6 nm)/Co75Fe25(40 nm). The top (thin) layer is patterned into an ellipse of size 150times85 nm, while the bottom layer is unpatterned...
For toggle MRAM, the free layer is a synthetic antiferromagnet (SAF) that must have specific magnetic properties such as: low magnetostriction, a repeatable saturation field (Hsat) that can be adjusted within a specific range, and a well-defined and reproducible intrinsic anisotropy axis. The results from fully-functional Mb-scale MRAM circuits using CoFeB SAF free layers optimized for toggle switching...
A composite nanowire geometry consisting of soft magnetic (Ni) nanowire lower part and hard magnetic (CoPt) L10 nanowire upper part, has been prepared by electrodeposition into anodized aluminum oxide (AAO) nanopores with ~20-30 nm diameter, ~100 nm tall. The as-deposited nanowires within the AAO pores were then annealed at 700 degree C for 1 hour for conversion to L10 phase. The The microstructure...
The authors measured the remanent magnetization curves for a series of CoPtCr-SiO2 perpendicular media with various thickness at low and high applied field sweep rates. They discussed the "intrinsic" switching field distribution (SFD) caused by the variations in the grain-to-grain switching field. Magnetic analysis revealed the values of the saturation magnetization and the uniaxial magnetic...
In the present study, the switching field distribution (SFD) of the Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media has been studied in relation to the Ar pressure at which the recording layer was deposited. The goal of the present study is to correlate the SFDs of the Tb/Pt/Ru/CoPtCr-SiO2 media with their intergranular exchange coupling and their grain size distribution.
In this study, the spatial distribution of MSF in CoCrPt-Si02 granular perpendicular recording medium and CoCrPt patterned medium are reported. MFM images were observed with a SPA300HV scanning probe microscope coupled to an electromagnet producing a controllable perpendicular magnetic field of up to 10 kOe in a vacuum. The diameter of the cutting edge of the probe tip was less than 30 nm. Measurement...
In this report, we will demonstrate that by simply using a bilayer capping layer of Ru/Ta instead of usually used Ta, the switching field, as well as distribution of switching fields, of magnetic tunnel junctions (MTJ) can be considerably reduced. Two samples with the same MTJ stack of Ta/PtMn/SAF-pinned/AlOx/CoFeB(2 nm) (bottom to top) but capped by different metal layers of Ta and Ru/Ta, correspondingly,...
This research investigates the design and fabrication of digital magnetic structures consisting of multilayers that exhibit uniaxial anisotropy and can adopt one or more of several distinguishable magnetic states. Such digital magnetic structures can be used as a basis for nanoscale memory devices, logic devices, etc. The direction of the magnetisation of each layer corresponds to either a "1"...
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