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In this paper, the authors studied the ferromagnetic resonance (FMR) linewidth of thin Fe films in NM/Fe/NM structures (NM[30 Aring]=Al, Cu, Ti and Ta) to investigate the relaxation mechanism. Polycrystalline Fe films, with thicknesses of 20 to 300 Aring in steps of 20 Aring were grown by sputtering on GaAs(100) substrates. The experimental results and their interpretation agreed with the microscopic...
In this paper, nonmagnetic elements (Al and Cu) doping effect on the structural and magneto-transport properties of Zn0.85Mn0.15O (ZnMnO) dilute magnetic semiconductors were reported. The structural characterization was performed using XRD, Raman spectroscopy, AFM and SEM. Temperature dependent electrical resistivity, Hall effect, and were carried out using a standard magneto-transport set-up.
The area-dependence of spin-transfer resonance in giant magnetoresistance (GMR) contacts from 50-300 nm diameter d is measured in this paper. With increasing d , a decreasing slope df/dl of precession frequency vs. current and an increasing critical current Ic is found. The data is well fit by a model where the precessing region extends outside the contact by a ring of width delta~ 50 nm. A GMR film...
This paper investigates the switching speed in samples having different surfaces (hereafter quoted as "small" or "large" samples), and compares the temperature dependences thereof. The "large" samples are pseudo-spin valves Co75Fe25 (2.5 nm)/Cu(6 nm)/Co75Fe25(40 nm). The top (thin) layer is patterned into an ellipse of size 150times85 nm, while the bottom layer is unpatterned...
We present here our results on the synthesis and characterization of transition metal (TM) doped-ZnO nanocrystals, where (TM= Co, Ni, Fe, Cu and Cr). Stable suspensions of these materials were produced in ethanol solution at room-temperature condition. liquors. XRD characterization of doped systems confirmed the exclusive formation of the host ZnO wurtzite structure. The incorporation of dopant species...
Half metallic Fe3O4 with a fully spin-polarized band structure at the Fermi level is one of the most promising materials for magnetic random access memory (MRAM), which stores data in pseudo spin valve (PSV) or magnetic tunneling junction elements. Ordered arrays of such nanostructures provide the basic magnetic architecture required to produce MRAM. Fe3O4 (40 nm) / Cu (tCu) / Ni80Fe20 (30 nm) PSV...
In this study, the effects of post annealing temperature ranging from 250 degC to 350 degC on the giant magnetoresistance (GMR) ratio and conductance change (DeltaG) have been investigated. The structure of the GMR spin-valve consists of Cu (10 A) / IrMn (80 A) / CoFe (15 A) / NOL / CoFe (20 A) / Cu (28 A) / CoFe (tf) / NOL / Cu (10 A) / Al2O3 where tf is varied from 10 A to 200 A and NOL is a nano-oxide...
In this article, the authors proposed an alternative method to improve the magnetoresistance (MR) by inserting a thin ferromagnetic (FM) layer in the nonmagnetic (NM) spacer of a basic spin valve (SV) trilayer structure (FM-NM-FM), thus creating a pentalayer structure. It is found that MR value can be doubled by inserting a FM layer with high intrinsic spin polarization, such as halfmetallic CrO2.
In this work, the authors report giant magnetoresistance (GMR) and the differential conductance anomalies observed in ferromagnetic nano-contacting wire, which have never been observed in non-magnetic one.
In this work we represent a comprehensive study of indirect exchange coupling between ferromagnetic (F) and antiferromagnetic (AF) layers carried out on NiFe(5 nm)/Cu(d)/IrMn(10 nm) thin film structure. NiFe/Cu/IrMn films were fabricated by magnetron sputtering with a seed and a capping layers of Ta(5nm). The thickness d of the Cu spacer was varied from 0.2 nm to 2 nm. The Cu spacer thickness was...
In this study, spin-transfer induced magnetization dynamics in exchange-biased spin-valves, for both polarities of current and field are studied. The structure of the samples included a synthetic pinned layer and a soft free layer, patterned into square pillars with a lateral size of the order of 100 nm. The resistance of the pillars was of the order of 5Omega, and the measured giant magnetoresistance...
In this paper, the characteristics of the osmium (Os) in textured CoFe/IrMn magnetic film multilayer structure system is investigated and the characteristics of buffer layer and diffusion barrier is also reported. To examine the magnetic behavior, magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer (VSM) are used and XRD is used to examine the crystal structure. As a result, a textured...
Magnetic properties of magnetic multilayers, such as Co/Cu and Tb/Co, deeply depend on sputtering conditions (S.S.P. Parkin et al., 1991),(S. Schumeusser et al., 1997). However, it is not clear that the relationship between plasma parameter of sputtering discharge, and interface structure and magnetic properties of the multilayers. In particular, the magnetoresistance (MR) ratio for Co/Cu multilayers...
In this work, Co/Cu multilayered nanowires with different crystallographic orientations were deposited by template-assisted electrochemical deposition into alumina nanopore arrays. Results showed that by applying magnetic fields during the deposition, the crystallographic texture of Co layers could be effectively influenced. The giant magnetoresistance (GMR) effect decreased with decreasing Cu thicknesses...
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