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In this report, the magnetic microstructures of the melt-spun(Fe0.55Pt0.45)78Zr2B20 and (Fe0.55Pt0.45)78Zr4B18 in as-quenched state were investigated by Lorentz microscopy and electron holography. The in-plane component of the magnetic flux was visualized by analyzing the phase shift of the electrons traversing the specimen by using the Fourier transform for digital holograms. An ex situ observation...
In this report, we will demonstrate that by simply using a bilayer capping layer of Ru/Ta instead of usually used Ta, the switching field, as well as distribution of switching fields, of magnetic tunnel junctions (MTJ) can be considerably reduced. Two samples with the same MTJ stack of Ta/PtMn/SAF-pinned/AlOx/CoFeB(2 nm) (bottom to top) but capped by different metal layers of Ta and Ru/Ta, correspondingly,...
This paper aims to investigate the magnetic and electrical properties of magnetic tunnel junctions with MgO barriers. The magnetoresistance of the junction is measured at 0.4 V. Results show a magnetoresistance of almost the same values at varying radical oxidation time and Mg thickness. It is also confirmed in this study that the MgO formed by radical oxidation of Mg shows high magnetoresistance...
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