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The current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various free layer materials including synthetic structure was studied in this paper. The MTJ films were deposited on SiO2/Si substrates using RF magnetron sputtering. The tunnel magnetoresistance (TMR) ratios and current-voltage (I-V) characteristics of the the MTJs were measured at room temperature...
In this study, we investigated the TMR effects in CoFeB/MgO/Heusler alloys (Co2FeSi and Co2MnSi) magnetic tunnel junctions. Both Co2FeSi and Co2MnSi heusler alloys have half-metallic band structure and high Curie temperature of 1200K and 985K, respectively. Moreover, the lattice mismatch between the Heusler alloys and MgO barrier is relatively small, which indicates that the highly textured Heusler...
CoFeB layer with amorphous structure has attracted much attention due to its soft magnetic properties and the realization of large tunnel magnetoresistance (TMR) ratio at room temperature when used as the free layer in ferromagnet/insulator/ferromagnet magnetic tunnel junctions. Two types of multilayer films were prepared in this study. Type I is a full stack of MTJs to evaluate the transport properties,...
This paper investigates the relationship between the tunneling magnetoresistance (TMR) ratio and the structure of MgO-based MTJs with crystallized CoFeB layers by annealing having CoFe/Ru/CoFeB synthetic ferrimagnet (SF) pin layers with varying Ru spacer thicknesses (tRu). When annealing temperature Ta is lower than 325degC, the Ta dependences of the TMR ratio are similar among all the MTJs. However,...
In this paper, we have fabricated and studied the bias dependence of magnetic tunnel junctions based on a CoFeB / MgO / CoFeB tri-layer structure. These structures exhibit TMR ratios as high as 236% at room temperature. Furthermore, we have observes a weakened dependence of TMR on bias voltage in these structures, with the MR ratio decaying to one half of the zero-bias value at an applied voltage...
This paper aims to investigate the magnetic and electrical properties of magnetic tunnel junctions with MgO barriers. The magnetoresistance of the junction is measured at 0.4 V. Results show a magnetoresistance of almost the same values at varying radical oxidation time and Mg thickness. It is also confirmed in this study that the MgO formed by radical oxidation of Mg shows high magnetoresistance...
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