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A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated. The influence on output power, threshold current, thermal stability and modal properties from design parameters such as bottom-distributed Bragg reflector (DBR) doping, cavity doping, dielectric top DBR...
Small-sized modules that have an output power P > 100 mW with a spectral width <0.25 pm at 15??C are presented. The modules, aimed at HeNe laser applications, are stabilised at 632.8 nm with reflective volume Bragg gratings at the rear side of a tapered gain medium. The gain medium consists of AlGaInP layers grown on GaAs with metal-organic vapour-phase epitaxy, which allows for an emission...
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