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A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated. The influence on output power, threshold current, thermal stability and modal properties from design parameters such as bottom-distributed Bragg reflector (DBR) doping, cavity doping, dielectric top DBR...
The dynamic performance including chirp measurements of 1.27 mum single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation...
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