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The following topics were dealt with: gallium arsenide semiconductors; compound semiconductors; field effect transistors; pseudomorphic high electron-mobility transistor; heterojunction bipolar transistors; PHEMT and HBT power amplifiers; microwave integrated mixers; low noise and broadband amplifiers; nanodevices for RF applications; photonic devices and circuits; 3D MCM modules for space applications;...
This paper presents a low noise and high linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN. Previous LNAs based on FET series such as HEMT show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base doping concentration. The proposed LNA is fully integrated in area of 0.9 /spl times/ 0.9 mm/sup 2/...
The paper highlights some of the newest results achieved in the framework of the transmitter modeling for wideband access transmitters work package within the IST-EU network of excellence TARGET. Two cases of study have been considered to discuss the outcome, namely the IEEE 802.11a WLAN and the IEEE 802.15.3a UWB. A specific discussion about the subsystem modeling requirements in terms of key parameters...
A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1/spl times/0.9 mm/sup 2/. At 1 V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output power for a maximum 3% error vector magnitude...
SiGe power HBTs integrated in SiGe BiCMOS are developed and characterized at 2.4 GHz for 802.11b and 5.8 GHz for 802.11a wireless LAN applications. Design considerations of ballast resistors for SiGe power HBTs at these two frequencies are investigated for both good thermal stability and high RF power performance. The investigations show that emitter ballast resistors or base ballast resistors should...
A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5 V single supply has been developed for both WLAN 2.4 GHz and 5.2 GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and proper...
A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 /spl mu/m 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5 dB, input/output return loss better than 10 dB, and input P/sub 1dB/...
This paper presents the design of an integrated double balanced mixer on a novel multilayer LCP based substrate. Low-loss lumped and distributed components were realized on a 3-layer LCP stackup, which were then used for the design of novel wideband baluns. A double balanced mixer for WLAN applications was realized using embedded baluns in the substrate. The mixer exhibits 5.1-8.6 dB conversion loss...
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