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The following topics were dealt with: gallium arsenide semiconductors; compound semiconductors; field effect transistors; pseudomorphic high electron-mobility transistor; heterojunction bipolar transistors; PHEMT and HBT power amplifiers; microwave integrated mixers; low noise and broadband amplifiers; nanodevices for RF applications; photonic devices and circuits; 3D MCM modules for space applications;...
SiGe power HBTs integrated in SiGe BiCMOS are developed and characterized at 2.4 GHz for 802.11b and 5.8 GHz for 802.11a wireless LAN applications. Design considerations of ballast resistors for SiGe power HBTs at these two frequencies are investigated for both good thermal stability and high RF power performance. The investigations show that emitter ballast resistors or base ballast resistors should...
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