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A solid-phase epitaxy (SPE) process based on material inversion of an amorphous silicon (alpha-Si) on aluminum layer-stack is applied to form ultrashallow p-type junctions. In this paper, we demonstrate the controllability of the whole process when the junction area is reduced to the sub-100-nm range and the processing temperature is reduced to 400 degC. The SPE-Si to Si-substrate interface, analyzed...
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