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The electrical characteristics and reliability of the aluminum oxide (Al2O3) metal-oxide-semiconductor (MOS) capacitors were investigated under low-temperature process consideration. The simple cost-effective technique in preparing the Al2O3/SiO2 bilayer structure as the high-k gate dielectrics was demonstrated in this paper. SiO2 was prepared by room-temperature anodic oxidation, and Al2O3 was fabricated...
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