The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An LNA with 15 K noise at 2.45 GHz working at ambient temperature has been developed using the GaAs metamorphic HEMT iT8002D manufactured by GigOptix. Unfortunately, this transistor has been discontinued. We replaced iT8002D by the FHX45X, general purpose GaAs SuperHEMT manufactured by Eudyna in the same circuit. FHX45X has the same gate width of 280 um. The measured S parameters were quite similar...
In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark different low-noise technologies has been discussed. Following this, basic concepts related to thermal noise in FETs and the reason why such technologies feature outstanding low-noise performance was illustrated/ and a short survey...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.