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A nonstoichiometric Si1−xGex with composition ratio dependent saturable absorption prepared by vaporized synthesis and chemical exfoliation is performed to passively mode-lock the Erbium-doped fiber laser (EDFL). The Si1−xGe x with varied Ge/Si composition ratio from 3 to 16 exhibits tunable nonlinear modulation depth from 17% to 22%, where the Si1−xGe x with the highest Ge content performs the largest...
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