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Doping enables the effective tuning of the properties of semiconductor nanocrystals (NCs). In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is shown that B atoms prefer residing at/near the NC surface, rather than in the NC core. The surface state of Ge NCs is modified by the B doping. The oxidation of B-doped Ge NCs is not as serious as that of undoped Ge NCs. Devices...
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