The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
GaInAs was grown by atmospheric-pressure MOVPE using tertiarybutylarsine in place of arsine. Its carbon content was low and its carrier density and mobility were 2*10/sup 15/ cm/sup -3/ and 50500 cm/sup 2//Vs at 77 K, respectively, comparable with arsine-grown GaInAs. The composition of the GaInAs was, however, sensitive to growth temperature, pin diodes grown from tertiarybutylarsine were comparable...
Multiquantum well p-i-n photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.<<ETX>>
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.