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The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6%. At a wavelength of 447%nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6%mW and an EQE of 49.7% at a current of 20%mA. The output power of the 9QW PSS-LED remains...
A process for fabrication of flip chip LEDs based on SnO2-GaN wafer bonding is reported. Typical LED characteristics have been measured and no detrimental effect of the bonding interface has been observed. The forward voltage at 20 mA is 3.96 V and differential resistance at 100 mA is as low as 16 Ω.
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