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Small-signal frequency characteristics indicating the effect of hole transit times were measured for `punch-through? p?v?p silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range (0.5?18MHz), thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic agree very well...
A theoretical model for the ionisation coefficient of electrons in silicon has been developed based on the solution of the Boltzmann transport equation. Analytic expressions are obtained for the ionisation coefficient and the drift velocity. Modifications in the deformation potential constants have been suggested for obtaining a fit to the experimentally observed results for the drift velocity and...
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