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Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 muA/cm2 at 1 V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.3 mum, respectively. This approach can be readily extended to other substrates, enabling the integration of Ge on...
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