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A 3T-2R non-volatile ternary content-addressable-memory (nvTCAM) is proposed. Using a voltage limiter and self-controlled bias circuit, both faster match line development and more sensing margin were possible when compared to the conventional nvTCAM. The voltage limiter provides a clear distinction between mismatch cell and ‘don't care’ cell. In case of nvTCAM made of non-volatile memory (NVM) with...
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