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An undoped GaSb epitaxial layer has been grown on a GaAs substrate by molecular beam epitaxy. It has been found that GaSb could be a potential surface terahertz (THz) emitter photoexcited by 1.55 μm femtosecond laser pulses since the maximum optical-to-THz power conversion efficiency is at around this wavelength. The THz field strength is 10 dB weaker as compared with that generated from narrow-gap...
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