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A 3 dB directional coupler and a balanced pin diode pair have been monolithically integrated in the InGaAs/InGaAsP/InP material system, together with the preamplifier front-end: a JFET and a load resistor. All the layers were grown in a single MOCVD epitaxy run. At 1.55 mu m, this integrated receiver coupled to a hybrid GaAs amplifier exhibits a 3 dB bandwidth of 2 GHz with a very low average input...
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