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Radio-frequency (RF) reflection gain in GaN homojunction p-n diode structures has been observed experimentally. A vertical p+/n structure grown on a native GaN substrate was used to achieve the high internal electric fields necessary to induce impact ionisation in GaN while minimising the effects of dislocations on the device performance. Amplitude and phase signatures in the measured RF reflection...
A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al2O3/III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turn-on voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate...
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