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A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 µJ is presented. The developed nanosecond electronic driver is based on GaN transistors and controlled by transistor–transistor logic compatible input pulses. A peak current of more than 430 A for 20–50 ns-long pulses with a repetition rate up to 100 kHz and an electrical efficiency of more than 50% is...
A small footprint diode laser array of 24 individually addressable distributed Bragg reflector lasers is presented. Third-order gratings etched into the surface of an AlGaAs vertical waveguide structure act as Bragg reflectors. The ridge waveguides have an 87 µm-wide spacing and the emission wavelengths are spread on a 0.5 nm-wide grid around a centre wavelength of 905 nm. All 24 lasers on the array...
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