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A bipolar junction transistor (BJT)-based scattered relative temperature sensor front-end with a 5 × 5 remote sensor node array in 180 nm CMOS process is presented. To eliminate diode mismatches and reduce the sensor node area, a single-diode approach that accurately switches different amounts of currents into a single PNP BJT is employed. Dynamic element matching (DEM) is applied to the current mirrors...
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