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Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull characteristics are extracted from a 0.13 × 3 μm2 emitter area SiGe HBT. The aim of this study is to provide a...
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