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The growth by molecular-beam epitaxy of pyramidal structures on GaAs[100] patterned substrates is described. Pyramidal structures defined by four [110] facets were realised by the growth of GaAs on square mesas with sides along the [010] and [001] directions. These structures can be used for the fabrication of three-dimensionally confined structures.<<ETX>>
A four-channel DBR laser array with different lasing wavelengths has been developed for a light source in WDM systems by using a simple selective MOCVD growth technique. Four different lasing wavelengths with a 5nm spacing were achieved by varying the waveguide thickness. The fabrication techniques and lasing characteristics of the device are demonstrated.<<ETX>>
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