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The authors have characterised a GaAs/Al/sub 0.25/Ga/sub 0.75/As heterojunction bipolar transistor (HBT) with transparent indium tin oxide (ITO) emitter contacts. An ITO to n-GaAs contact resistance of 2*10/sup -7/ Omega /cm/sup 2/ was measured with 50AA of indium as a prelayer. HBT devices with f/sub T/=18GHZ, f/sub max/=20GHz, and optical pulse response of 80ps FWHM have been measured. The results...
A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was developed for application in integrated circuits. The HBT is characterised by an emitter base heterojunction and consequently by a high base doping concentration. By using these transistors an integrated digital circuit, a multiplexer, was implemented. The measured bit rate of this first Si/SiGe HBT circuit was 16 Gbit/s.<<ETX>>
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