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Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.<<ETX>>
Extremely low-resistance nonalloyed ohmic contacts have been formed on p-type Ge grown on GaAs by molecular beam epitaxy as part of a research effort into GaAs/Ge heterojunction devices. Using evaporated Ti/Al metallisation, specific contact resistances well below 1*10/sup -8/ Omega cm/sup 2/ were achieved for heavily doped Ge (p>1*10/sup 19/ cm/sup -3/). The investigated Ge layers were grown as...
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