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An edge-coupled PIN photodetector with an InGaAs absorber layer has been designed and fabricated. Values of bandwidth at 1530 nm, with and without bias, have been measured as 50 GHz and 20 GHz, respectively. The external quantum efficiency is as high as 40% using a standard 12 mu m radius lens-ended single-mode fibre.<<ETX>>
Four-channel receiver arrays have been fabricated by monolithically integrating diffused InGaAs JFET-based electronics with InGaAs pin photodiodes. Cascode and simple inverter transimpedance amplifier circuits have been produced, both of which use a micro-FET as a tunable feedback element to vary bandwidth between 20 and 800 MHz. A sensitivity of -28.2 dBm was achieved at 1.25 Gbit/s with crosstalk...
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