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Laser arrays have been fabricated with silicon-impurityinduced disordered nonabsorbing mirrors (windows) to enhance the maximum CW power output. The power output was thermally limited for a 100 ?m-aperture device to 2.4 W CW while catastrophic failure occurred under pulsed conditions at 3.5 W in a 100 ?s pulse and increased to 22 W for a 50 ns pulse. The emission wavelength of these diodes is 770...
A 20 GHz bandwidth VUG (V-on-U groove) DFB GaInAsP laser based on a zero net strain quaternary quantum well active structure grown at a constant phosphorus/arsenic ratio is described. The active structure is designed such that emission wavelength has excellent thermal stability in order to avoid gain peak shifts during two epitaxial regrowths. Using this active material, the authors show that high-performance...
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