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Multiquantum-well lasers have been fabricated by molecular beam epitaxy (MBE) in the 'phosphorus-free' AlGaInAs/GaInAs system. For the first time, very low current densities were obtained: 940 A/cm/sup 2/ for a 800 mu m-long device at 1.58 mu m. The structures used a quaternary alloy for the buffer layer and the quantum well barriers; the best result was obtained from a graded-index waveguide separate-confinement...
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