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The first successful growth and fabrication of long wavelength (1.5-1.7 mu m) DH and MQW lasers by atmospheric pressure MOVPE in a 'phosphorus-free' material system is reported. The GaInAs/AlGaInAs DH and MQW lasers were grown on InP substrates. DH lasers emitting at around 1690 nm exhibit threshold current densities down to 2.8 kA/cm/sup 2/ at 25 degrees C; the characteristic temperature is 50 K...
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