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Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing...
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