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The fabrication of long-wavelength metal-semiconductor-metal photodetectors using an InGaAs:Fe photoactive layer and an InP:Fe barrier enhancement layer is reported. An internal quantum efficiency of 100% and a dark current of 250 nA at 5 V bias is achieved. High-speed performance is studied as a function of contact spacing, showing an impulse response of less than 18 ps. Microwave s/sub 11/-parameter...
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