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The optimisation of AlGaInP/GaInPAs MQW heterostructure metal-organic chemical vapour deposition growth as well as the improvements of active channel formation and P-contact deposition technologies is shown to enable a significantly increased external differential efficiency up to 0.5 mW/mA and catastrophic optical damage threshold up to 50 mW of spatially single-mode superluminescent diodes (SLDs)...
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