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The performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunnel field-effect transistors (TFETs) for microwave-frequency detection is explored experimentally. The strong nonlinearity of the TFET transfer characteristic, which arises from a combination of band-to-band tunnelling between source and channel and gate modulation of the tunnel junction, can be utilised for high-sensitivity microwave...
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