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The experiment of thermally stimulated charge release has been used in the m.o.s. capacitor to study electron and hole states in the metal-oxide-silicon system. Broadly similar results have been obtained for `wet? and `dry? oxides on `mechanically? and `chemically? polished silicon surfaces. A representative spectrum is presented showing electron and hole interface states spread over most of the energy...
An analytical expression defining the total mobility ? in germanium as a function of doping and temperature is obtained. Although based on certain empirical relations, the expression for ? is found to be reasonably valid in the useful and normally encountered concentration and temperature ranges. The mobility thus obtained is used to calculate the average conductivity of diffused impurity layers (p...
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