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In an attempt to enhance the reliability of GaN-based light-emitting diodes (LEDs), the selective wet chemical etching of p-GaN surface in the GaN-based LEDs using KOH+NaOH in an ethylene glycol solution was investigated. The leakage currents of the etched LED under forward and reverse bias voltages were much lower, compared to those of a nonetched LED. The etched LED also showed improved light extraction...
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