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This letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonant-cavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion (H+) in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level ( ~ 512 nm, 2.4 eV). Superior directionality was...
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