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In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with very narrow channel length, $1~\mu \text{m}$ , are presented. To cover the steep slope at the dry-etched gate pattern edge with a thin gate insulator, a triangular-shaped gate spacer was introduced. A 1-$\mu \text{m}$ short-channel oxide TFT is particularly adaptable to next-generation display applications...
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