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Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) in the bottom-gate back-channel-cut geometry were made with a homogeneous SiO2-silicone hybrid as the gate dielectric. The dielectric is deposited in a plasma-enhanced chemical vapor deposition (PE-CVD) system at nominal room temperature, and the a-Si:H channel and n+ source/drain layers are deposited by PE-CVD at 150degC. The threshold...
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