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Amorphous indium–gallium–zinc oxide-based synaptic transistors with hafnium oxide (HfOx) insulating layer were fabricated to mimic synaptic long-term depression (LTD) characteristics. The fabrication temperature was less than 120°. Interval time of presynaptic spikes-dependent synaptic depression was first demonstrated in these IGZO-based synaptic transistors, which is important for computation system...
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